| Part number | 2SK3563 |
|---|---|
| Datasheet | 2SK3563_ToshibaSemiconductor.pdf |
| File Size | 338.22 KB |
| Manufacturer | Toshiba |
| Description | N-Channel MOSFET |
|
|
Gate Drain Source JEDEC JEITA TOSHIBA ― ― ― Thermal Characteristics Characteristics , channel to case , channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.57 62.5 Unit 2 °C/W °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. VDD = 90 V, Tch = 25°C(initial), L = 12.2 mH, IAR = 5 A, RG = 25 Ω Note.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SK3563 | N-Channel MOSFET Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| 2SK3562 | N-Channel MOSFET |
| 2SK3564 | MOSFET |
| 2SK3565 | N-Channel MOSFET |
| 2SK3567 | N-Channel MOSFET |
| 2SK3568 | N-Channel MOSFET |
| 2SK3569 | N-Channel MOSFET |
| 2SK3506 | N-Channel MOSFET |
| 2SK3538 | N-Channel MOSFET |
| 2SK3544 | Silicon N-Channel MOS Type FET |
| 2SK3582TK | N-Channel MOSFET |
