Datasheet Summary
DataSheet.in
TENTATIVE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ)
2SK3563 unit：ｍｍ
Switching Regulator Applications
10±0.3
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.5 150 -55~150 A W mJ A mJ °C °C Unit
0.69±0.15
2.8Max
2.54±0.25 0.64±0.15 2.54±0.25 2.6
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1. 2....
