2SK3569 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) Switching Regulator Applications - Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) - High forward transfer admittance: |Yfs| = 8.5 S (typ.) - Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) - Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS IAR EAR Tch Tstg ±30 A 40 363 m J 4.5 m J °C -55 to...