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2SK3754
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3754
Relay Drive, DC−DC Converter and Motor Drive Applications
• • • • • 4.5-V gate drive Low drain-source ON resistance: RDS (ON) = 71 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 5 15 25 4.0 2.5 2.
2SK3754 Datasheet
