2SK3754
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Relay Drive, DC- DC Converter and Motor Drive Applications
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- 4.5-V gate drive Low drain-source ON resistance: RDS (ON) = 71 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 m A) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 5 15 25 4.0 2.5 2.5 150
- 55~150 Unit V V V A
JEDEC
W m J A m J °C °C
― SC-67 2-10R1B
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEITA TOSHIBA
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the...
