2SK3759
..
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y )
2SK3759 unit- F‚- ‚-
Switching Regulator Applications
- -
- - Low drain-source ON resistance: R DS (ON) = 0.75ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 500 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 m A)
3.84- }0.2
3.84- } 0 .2
10.5 10.5 max max
4.7 max 4.7 max
1.3 6.6 max
6.6 max.
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Rating 500 500 ±30 8 32 Unit V
15.6 15.6 max. max
13.4 13.4 min. min
3.9 max 3.9 max.
1.5 max 1.5 max 0.81
0.81 max 0.45 0.45
2.7 2.54 2.54...
