Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
Switching Regulator Applications z Low drain- source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.33 Ω (typ.) : |Yfs| = 8.5 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1...