Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOS VI)
Switching Regulator Applications
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- - Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 13 52 50 1033 13 5.0 150
- 55~150 A W mJ A mJ °C °C
1: Gate 2: Drain 3: Source
Unit V V V
Pulse (t = 1...