Datasheet Details
| Part number | 30J324 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 210.33 KB |
| Description | Transistor Silicon N-Channel IGBT |
| Datasheet | 30J324-ToshibaSemiconductor.pdf |
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Overview: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode.
| Part number | 30J324 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 210.33 KB |
| Description | Transistor Silicon N-Channel IGBT |
| Datasheet | 30J324-ToshibaSemiconductor.pdf |
|
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| Part Number | Description |
|---|---|
| 30JL2C41 | HIGH EFFICIENCY DIODE STACK |