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30JL2C41 - HIGH EFFICIENCY DIODE STACK

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Part number 30JL2C41
Manufacturer Toshiba Semiconductor
File Size 309.65 KB
Description HIGH EFFICIENCY DIODE STACK
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Full PDF Text Transcription

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30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Unit: mm z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 30 A z Ultra Fast Reverse-Recovery Time : trr = 50 ns (Max) z Low Switching Losses and Output Noise ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 600 V Average Output Rectified Current IO 30 A Peak One Cycle Surge Forward Current (Sine Wave) IFSM 150 (50Hz) A 165 (60Hz) Junction Temperature Storage Temperature Range Screw Torque Tj −40~150 °C JEDEC ― Tstg −40~150 °C JEITA ― TOSHIBA 12−16D1A ― 0.8 N·m Weight: 4.
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