30JL2C41 - HIGH EFFICIENCY DIODE STACK

Toshiba

Datasheet Details

Part number	30JL2C41
Manufacturer	Toshiba
File Size	309.65 KB
Description	HIGH EFFICIENCY DIODE STACK
Datasheet	30JL2C41 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
30J101	Silicon N-Channel IGBT	Toshiba
30J121	Silicon N-Channel IGBT	Toshiba
30J122	Silicon N-Channel IGBT	Toshiba
30J122A	Silicon N-Channel IGBT	Toshiba
30J126	Silicon N-Channel IGBT	Toshiba

Other Datasheets by Toshiba

Part Number	Description
30J324	Transistor Silicon N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Unit: mm z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 30 A z Ultra Fast Reverse-Recovery Time : trr = 50 ns (Max) z Low Switching Losses and Output Noise ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 600 V Average Output Rectified Current IO 30 A Peak One Cycle Surge Forward Current (Sine Wave) IFSM 150 (50Hz) A 165 (60Hz) Junction Temperature Storage Temperature Range Screw Torque Tj −40~150 °C JEDEC ― Tstg −40~150 °C JEITA ― TOSHIBA 12−16D1A ― 0.8 N·m Weight: 4.