3SK240 - GaAs N-Channel Dual Gate MES Type FET

Toshiba

Datasheet Details

Part number	3SK240
Manufacturer	Toshiba
File Size	184.13 KB
Description	GaAs N-Channel Dual Gate MES Type FET
Datasheet	3SK240 Datasheet

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Other Datasheets by Toshiba

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3SK249	N-CHANNEL DUAL GATE MOS TYPE TRANSISTOR
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3SK226	Silicon N Channel Dual Gate MOS Type FET
3SK256	Silicon N Channel Dual Gate MOS Type FET

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TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK240 3SK240 TV Tuner, UHF RF Amplifier Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Gate 1-drain voltage Gate 2-drain voltage Gate 1-source voltage Gate 2-source voltage Gate 1 current Gate 2 current Power dissipation Channel temperature Storage temperature range Symbol VG1D0 VG2D0 VG1S VG2S IG1 IG2 PD Tch Tstg Rating -9 -9 -4 -4 1 1 150 125 -55~125 Unit V V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.013 g (typ.