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GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High-Power Switching Applications Fourth Generation IGBT
Unit: mm
• FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A)
FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
symbol
Rating
Unit
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC 1 ms
Emitter-Collector Forward Current
DC 1 ms
Collector Power Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
VCES VGES
IC ICP IECF IECFP
PC
Tj Tstg ⎯
1000 ±25 60 120 15 120
170
150 −55 to 150
0.
60N321 Datasheet
