60N321
60N321 is GT60N321 manufactured by Toshiba.
GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High-Power Switching Applications Fourth Generation IGBT
Unit: mm
- FRD included between emitter and collector
- Enhancement mode type
- High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A)
FRD : trr = 0.8 μs (typ.) (di/dt =
- 20 A/μs)
- Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60...
