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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1932
Power Amplifier Applications Driver Stage Amplifier Applications
2SA1932
Unit: mm
• High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC5174
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−230
V
Collector-emitter voltage
VCEO
−230
V
Emitter-base voltage
VEBO −5 V
Collector current
IC −1 A
Base current
IB
−0.1
A
Collector power dissipation Junction temperature Storage temperature range
PC 1.8 W
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10T1A
temperature/current/voltage and the significant change in temperature, etc.
A1932 Datasheet
