The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1933
2SA1933
High-Current Switching Applications
Industrial Applications Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5175
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−60 −50 −7 −5 −1 1.8 150 −55 to 150
V V V A A W °C °C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g.
A1933 Datasheet
