C5886 - 2SC5886

Toshiba Semiconductor

Datasheet Details

Part number	C5886
Manufacturer	Toshiba Semiconductor
File Size	171.42 KB
Description	2SC5886
Datasheet	C5886 Datasheet
Additional preview pages of the C5886 datasheet.

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Full PDF Text Transcription

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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications 2SC5886 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 100 V 80 V 50 7 V 5 A 10 0.5 A 1 W 20 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.

Published: Nov 21, 2015 |