C6000 - 2SC6000

Toshiba Semiconductor

Datasheet Details

Part number	C6000
Manufacturer	Toshiba Semiconductor
File Size	189.10 KB
Description	2SC6000
Datasheet	C6000 Datasheet
Additional preview pages of the C6000 datasheet.

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Full PDF Text Transcription

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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications 2SC6000 Unit: mm • High DC current gain: hFE = 250 to 400 (IC = 2.5 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High speed switching: tf = 13 ns (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Tc = 25°C Junction temperature Storage temperature range VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 120 120 50 6 7.0 10.0 0.5 20 150 −55 to 150 V V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.

Published: Oct 21, 2015 |