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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6000
High Speed Switching Applications DC-DC Converter Applications
2SC6000
Unit: mm
• High DC current gain: hFE = 250 to 400 (IC = 2.5 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High speed switching: tf = 13 ns (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEX VCEO VEBO
IC ICP IB
PC
Tj Tstg
120 120 50
6 7.0 10.0 0.5
20
150 −55 to 150
V V V V
A
A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.
C6000 Datasheet
