CMZ24 Datasheet | Toshiba

○ Surge absorber CMZ12 to CMZ51 TOSHIBA Zener Diode Silicon Diffused Type CMZ12 to CMZ51 Unit: mm - Average power dissipation : P = 2 W - Zener voltage : VZ = 12 to 51 V - Suitable for pact assembly due to small surface mount package “M- FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Symbol Rating Unit P 2 (Note 1) W 1. Anode 2. Cathode Junction temperature Tj - 40 to 150 °C Storage temperature range Tstg - 40 to 150 °C Note 1: Ta = 30°C Device mounted on a ceramic board Board size : 50 mm × 50 mm Land Pattern size : 2 mm × 2 mm Board thickness : 0.64 mm JEDEC JEITA TOSHIBA Weight: 0.023 g (typ.) ― ― 3-4E1S Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Land Pattern Dimensions (for reference only) Unit: mm 1.4 3.0 Start of mercial production 2002-10 2015-05-15 CMZ12 to CMZ51 Electrical Characteristics (Ta = 25°C) Type Zener Voltage Vz...