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DF2B6M4SL - ESD Protection Diodes

Key Features

  • (1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±20 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.5 Ω (typ. )) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 10 V@IPP = 2 A (typ. )) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.32 ×.

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Datasheet Details

Part number DF2B6M4SL
Manufacturer Toshiba
File Size 351.00 KB
Description ESD Protection Diodes
Datasheet download datasheet DF2B6M4SL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESD Protection Diodes Silicon Epitaxial Planar DF2B6M4SL DF2B6M4SL 1. General The DF2B6M4SL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B6M4SL provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2B6M4SL is housed in an ultra-compact package (0.32 × 0.62 mm) to meet applications that require a small footprint. 2.