DF2S12FU Datasheet | Toshiba

TOSHIBA Diodes for Protecting against ESD Product for Use Only as Protection against Electrostatic Discharge (ESD) - This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. - Two-pin ultra-small packages are suitable for higher mounting densities. - Small total capacitance: CT = 15p F (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol Rating Unit 150 m W Tj °C Tstg - 55 to 125 °C JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 4.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Zener voltage Dynamic impedance Knee dynamic impedance Reverse current Total capacitance Symbol VZ ZZ ZZK IR CT Test Condition IZ = 5m A IZ = 5m A IZ = 0.5m A VR = 9V VR = 0V , f=1MHz Min Typ. Max Unit 11.4 12.0...