DF2S5M4SL - ESD Protection Diodes

Toshiba Semiconductor

Datasheet Details

Part number	DF2S5M4SL
Manufacturer	Toshiba
File Size	311.20 KB
Description	ESD Protection Diodes
Datasheet	DF2S5M4SL Datasheet
Additional preview pages of the DF2S5M4SL datasheet.

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ESD Protection Diodes Silicon Epitaxial Planar DF2S5M4SL DF2S5M4SL 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit 1: Cathode 2: Anode SL2 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) Electrostatic discharge voltage (IEC61000-4-2)(Air) VESD (Note 1) ±20 kV Peak pulse power (tp = 8/20 µs) Peak pulse current (tp = 8/20 µs) Junction temperature Storage temperature PPK IPP (Note 2) Tj Tstg 30 2.

Published: Sep 29, 2016 |