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DF3A6.8FE - Diodes

Download the DF3A6.8FE datasheet PDF. This datasheet also covers the DF3A6-8FE variant, as both devices belong to the same diodes family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (DF3A6-8FE_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Toshiba

Part Number Description
DF3A6.8FU DIODES
DF3A6.8LFE Diodes
DF3A6.8LFU Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DF3A6.8FE TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type DF3A6.8FE Diodes for Protecting Against ESD Unit in mm l Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost. l Zener voltage correspond to E24 series. Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 100 125 −55~125 Unit mW °C °C JEDEC EIAJ TOSHIBA Weight: 2.3 mg ― ― 1-2SA1A Electrical Characteristics (Ta = 25°C) Characteristic Zener voltage Dynamic impedance Knee dynamic impedance Reverse current Symbol VZ ZZ ZZK IR Test Circuit ― ― ― ― Test Condition IZ = 5mA IZ = 5mA IZ = 0.5mA VR = 5V Min 6.4 ― ― ― Typ. 6.