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DF3A6.8FE
TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type
DF3A6.8FE
Diodes for Protecting Against ESD
Unit in mm l Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost. l Zener voltage correspond to E24 series.
Maximum Ratings (Ta = 25°C)
Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 100 125 −55~125 Unit mW °C °C
JEDEC EIAJ TOSHIBA Weight: 2.3 mg
― ― 1-2SA1A
Electrical Characteristics (Ta = 25°C)
Characteristic Zener voltage Dynamic impedance Knee dynamic impedance Reverse current Symbol VZ ZZ ZZK IR Test Circuit ― ― ― ― Test Condition IZ = 5mA IZ = 5mA IZ = 0.5mA VR = 5V Min 6.4 ― ― ― Typ. 6.
DF3A6.8FE Datasheet
