DF3A6.8LFE - Diodes

This page provides the datasheet information for the DF3A6.8LFE, a member of the DF3A6-8LFE Diodes family.

Toshiba Semiconductor

Datasheet Details

Part number	DF3A6.8LFE
Manufacturer	Toshiba Semiconductor
File Size	115.34 KB
Description	Diodes
Datasheet	DF3A6.8LFE Datasheet
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www.DataSheet4U.com DF3A6.8LFE TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A6.8LFE Diodes for Protecting Against ESD Unit: mm · Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost. Zener voltage correspond to E24 Series. Low total capacitance: CT = 6.0 pF (typ.) · · Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 100 125 -55 to 125 Unit mW °C °C JEDEC JEITA TOSHIBA ― ― 1-2SA1A Electrical Characteristics (Ta = 25°C) Characteristics Zener voltage Dynamic impedance Knee dynamic impedance Reverse current Total capacitance Symbol VZ ZZ ZZK IR CT IZ = 5 mA IZ = 5 mA IZ = 0.

Published: Jan 12, 2007 |