| Part number | GT15J321 |
|---|---|
| Datasheet | GT15J321_ToshibaSemiconductor.pdf |
| File Size | 311.69 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
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GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications Unit: mm The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ.) Low saturation Voltage:.
| Part Number | Description |
|---|---|
| GT15J301 | Silicon N-Channel IGBT |
| GT15J311 | Silicon N-Channel IGBT |
| GT15J331 | Silicon N-Channel IGBT |
| GT15J101 | Silicon N-Channel IGBT |
| GT15J102 | Silicon N-Channel IGBT |
| GT15J103 | Silicon N-Channel IGBT |
| GT15J121 | Silicon N-Channel IGBT |
| GT15G101 | Silicon N-Channel IGBT |
| GT15M321 | Silicon N-Channel IGBT |
| GT15Q101 | Silicon N-Channel IGBT |
