GT15J321 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	GT15J321
Manufacturer	Toshiba
File Size	311.69 KB
Description	Silicon N-Channel IGBT
Datasheet	GT15J321 Datasheet

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GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications Unit: mm • • • • • • The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector. Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 ±20 15 30 15 30 30 150 −55~150 Unit V V A JEDEC A W °C °C ― ― 2-10R1C JEITA TOSHIBA Weight: 1.