| Part number | GT15J331 |
|---|---|
| Datasheet | GT15J331_ToshibaSemiconductor.pdf |
| File Size | 181.49 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
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GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications Unit: mm · · · · · The 4th Generation Enhancement-Mode High Speed: tf = 0.10 µs (typ.) Low Saturation Voltage:.
| Part Number | Description |
|---|---|
| GT15J301 | Silicon N-Channel IGBT |
| GT15J311 | Silicon N-Channel IGBT |
| GT15J321 | Silicon N-Channel IGBT |
| GT15J101 | Silicon N-Channel IGBT |
| GT15J102 | Silicon N-Channel IGBT |
| GT15J103 | Silicon N-Channel IGBT |
| GT15J121 | Silicon N-Channel IGBT |
| GT15G101 | Silicon N-Channel IGBT |
| GT15M321 | Silicon N-Channel IGBT |
| GT15Q101 | Silicon N-Channel IGBT |
