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GT15J331 - Silicon N-Channel IGBT

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Part number GT15J331
Manufacturer Toshiba Semiconductor
File Size 181.49 KB
Description Silicon N-Channel IGBT
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GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications Unit: mm · · · · · The 4th Generation Enhancement-Mode High Speed: tf = 0.10 µs (typ.) Low Saturation Voltage: VCE (sat) = 1.75 V (typ.) FRD included between Emitter and collector. Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 ±20 15 30 15 30 70 150 -55~150 Unit V V A A W W °C °C JEDEC JEITA TOSHIBA Weight: 1.
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