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GT15M321
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT15M321
HIGH POWER SWITCHING APPLICATIONS
l The 4th Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed l Low Saturation Voltage : tf = 0.20 µs (TYP.) (IC = 15 A) : VCE (sat) = 1.8V (TYP.) (IC = 15A) Unit: mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector−Emitter Voltage Gate-Emitter Voltage Collector Current Emitter−Collector Foward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 900 ±25 15 30 15 120 55 150 −55~150 UNIT V V A
A W °C °C
JEDEC JEITA TOSHIBA Weight: 5.
GT15M321 Datasheet
