GT15Q102 Description
GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage:.
GT15Q102 Datasheet
| Part number | GT15Q102 |
|---|---|
| Download | GT15Q102 Datasheet (PDF) |
| File Size | 152.24 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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