| Part number | GT15Q311 |
|---|---|
| Datasheet | GT15Q311-ToshibaSemiconductor.pdf |
| File Size | 167.16 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
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GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Motor Control Applications Unit: mm · · · · · The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage:.
| Part Number | Description |
|---|---|
| GT15Q301 | Silicon N-Channel IGBT |
| GT15Q101 | Silicon N-Channel IGBT |
| GT15Q102 | Silicon N-Channel IGBT |
| GT15G101 | Silicon N-Channel IGBT |
| GT15J101 | Silicon N-Channel IGBT |
| GT15J102 | Silicon N-Channel IGBT |
| GT15J103 | Silicon N-Channel IGBT |
| GT15J121 | Silicon N-Channel IGBT |
| GT15J301 | Silicon N-Channel IGBT |
| GT15J311 | Silicon N-Channel IGBT |
