Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
Unit: mm
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- The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 1200 ±20 15 30 15 30 160 150
- 55 to 150 Unit V V A
JEDEC
― ― 2-16H1A
JEITA TOSHIBA
Collector power dissipation (Tc = 25°C) Junction temperature Storage...