GT30J322 - Silicon N-Channel IGBT

Datasheet Details

Part number	GT30J322
Manufacturer	Toshiba Electronic Devices & Storage
File Size	422.05 KB
Description	Silicon N-Channel IGBT
Datasheet	GT30J322 Datasheet
Additional preview pages of the GT30J322 datasheet.

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Full PDF Text Transcription

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GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Unit: mm CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Emitter−Collector Forward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range DC 1ms DC 1ms VCES VGES IC ICP IF IFP PC Tj Tstg 600 ±20 30 100 30 60 75 150 −55 to 150 V V A A W °C °C JEDEC ⎯ JEITA ⎯ TOSHIBA 2-16F1A Weight: 5.8 g (typ.

Published: Mar 23, 2005 |