GT30J324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications Fast Switching Applications
Unit: mm
- Fourth-generation IGBT
- Enhancement mode type
- Fast switching (FS): Operating frequency up to 50 k Hz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 m J (typ.) : Eoff = 0.80 m J (typ.)
- Low saturation voltage: VCE (sat) = 2.0 V (typ.)
- FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage
Collector current
Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
DC 1 ms DC 1 ms
Symbol
VCES VGES
IC ICP IF IFM
Tj Tstg
Rating
600 ±20 30 60 30 60
- 55 to 150
Unit V V A
W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage...
