GT30J324 - Silicon N-Channel IGBT

Datasheet Details

Part number	GT30J324
Manufacturer	Toshiba Electronic Devices & Storage
File Size	210.33 KB
Description	Silicon N-Channel IGBT
Datasheet	GT30J324 Datasheet
Additional preview pages of the GT30J324 datasheet.

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Full PDF Text Transcription

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GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low saturation voltage: VCE (sat) = 2.0 V (typ.

Published: Mar 23, 2005 |