Datasheet Details
| Part number | GT60N321 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 178.05 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet | GT60N321_ToshibaSemiconductor.pdf |
|
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Overview: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm · · · · FRD included between emitter and collector.
| Part number | GT60N321 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 178.05 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet | GT60N321_ToshibaSemiconductor.pdf |
|
|
|
| Part Number | Description |
|---|---|
| GT60N322 | Silicon N-Channel IGBT |
| GT60J322 | Silicon N-Channel IGBT |
| GT60J323 | Silicon N-Channel IGBT |
| GT60M104 | Silicon N-Channel IGBT |
| GT60M301 | Silicon N-Channel MOSFET |
| GT60M302 | Silicon N-Channel MOSFET |
| GT60M303 | Silicon N-Channel IGBT |