GT60N321 datasheet by Toshiba.
| Part number | GT60N321 |
|---|---|
| Datasheet | GT60N321_ToshibaSemiconductor.pdf |
| File Size | 178.05 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
|
GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm · · · · FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD.
| Part Number | Description |
|---|---|
| GT60N322 | Silicon N-Channel IGBT |
| GT60J322 | Silicon N-Channel IGBT |
| GT60J323 | Silicon N-Channel IGBT |
| GT60M104 | Silicon N-Channel IGBT |
| GT60M301 | Silicon N-Channel MOSFET |
| GT60M302 | Silicon N-Channel MOSFET |
| GT60M303 | Silicon N-Channel IGBT |
