GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications The 4th Generation
Unit: mm
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FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr = 0.8 µs (typ.) (di/dt =
- 20 A/µs) Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Emitter-Collector Forward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Screw Torque DC 1 ms DC 1 ms symbol VCES VGES IC ICP IECF IECFP PC Tj Tstg ¾ Rating 1000 ±25 60 120 15 120 170 150 -55~150 0.8 Unit V V A
JEDEC
A W °C °C N･m
― ― 2-21F2C
JEITA TOSHIBA
Weight: 9.75 g (typ.)
Equivalent Circuit
Collector
Gate
Emitter
2002-01-18
Electrical Characteristics (Ta = 25°C)
Characteristic Gate Leakage Current Collector Cut-off Current Gate-Emitter Cut-off...
