GT60N322 datasheet by Toshiba.
| Part number | GT60N322 |
|---|---|
| Datasheet | GT60N322_ToshibaSemiconductor.pdf |
| File Size | 200.49 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.11 μs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit:.
| Part Number | Description |
|---|---|
| GT60N321 | Silicon N-Channel IGBT |
| GT60J322 | Silicon N-Channel IGBT |
| GT60J323 | Silicon N-Channel IGBT |
| GT60M104 | Silicon N-Channel IGBT |
| GT60M301 | Silicon N-Channel MOSFET |
| GT60M302 | Silicon N-Channel MOSFET |
| GT60M303 | Silicon N-Channel IGBT |
