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GT60N322 - Silicon N-Channel IGBT

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Datasheet Details

Part number GT60N322
Manufacturer Toshiba
File Size 200.49 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT60N322 Datasheet

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www.DataSheet4U.com GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonance Inverter Switching Application • • • • • Enhancement mode type High speed : tf = 0.11 μs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.4 V (typ.