GT60N323
GT60N323 is Silicon N-Channel IGBT manufactured by Toshiba.
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Voltage Resonance Inverter Switching Application
Unit: mm
- diode included between emitter and collector
- Enhancement mode type
- High speed IGBT : tf = 0.19 μs (typ.) (IC = 60 A) diode : trr = 0.35 μs (max.) (di/dt =
- 200...
