GT60N323 datasheet by Toshiba.
| Part number | GT60N323 |
|---|---|
| Datasheet | GT60N323-Toshiba.pdf |
| File Size | 138.03 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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GT60N323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N323 Voltage Resonance Inverter Switching Application Unit: mm diode included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.19 μs (typ.) (IC = 60 A) diode.
| Part Number | Description |
|---|---|
| GT60J321 | Silicon N-Channel IGBT |
| GT60J323H | Silicon N-Channel IGBT |
| GT60M322 | Silicon N-Channel IGBT |
| GT60M323 | Silicon N-Channel IGBT |
| GT60M324 | Silicon N-Channel IGBT |
| GT60PR21 | Silicon N-Channel IGBT |
