GT60M323 is Silicon N-Channel IGBT manufactured by Toshiba.
| Part Number | Description |
|---|---|
| GT60M322 | Silicon N-Channel IGBT |
| GT60M324 | Silicon N-Channel IGBT |
| GT60J321 | Silicon N-Channel IGBT |
| GT60J323H | Silicon N-Channel IGBT |
| GT60N323 | Silicon N-Channel IGBT |
GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : tf = 0.09 µs (typ.) (IC = 60 A) Low saturation voltage.
