GT60M323 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	GT60M323
Manufacturer	Toshiba
File Size	192.62 KB
Description	Silicon N-Channel IGBT
Datasheet	GT60M323 Datasheet

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GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • • • • • Enhancement mode type High speed : tf = 0.09 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.3 V (typ.