GT60M323 Overview
GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : tf = 0.09 µs (typ.) (IC = 60 A) Low saturation voltage.
GT60M323 Datasheet Details
| Part number | GT60M323 |
|---|---|
| Datasheet | GT60M323_Toshiba.pdf |
| File Size | 192.62 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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