GT60M323
GT60M323 is Silicon N-Channel IGBT manufactured by Toshiba.
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Voltage Resonance Inverter Switching Application
Unit: mm
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- Enhancement mode type High speed : tf = 0.09 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj...
