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GT60M322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M322
Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application
• • • • • Enhancement mode type High speed : tf = 0.15 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC Pulsed @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 950 ±25 60 120 25 50 76 190 150 −55 to 150 Unit V V A
JEDEC
A
― ― 2-21F2C
Diode forward current Collector power dissipation Junction temperature
JEITA TOSHIBA
W °C °C
Weight: 9.75 g (typ.
GT60M322 Datasheet
