GT60M322
GT60M322 is Silicon N-Channel IGBT manufactured by Toshiba.
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application
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- Enhancement mode type High speed : tf = 0.15 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC Pulsed @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 950 ±25 60 120 25 50 76 190 150
- 55 to 150 Unit V V A
JEDEC
― ― 2-21F2C
Diode forward...
