GT60M324 - Silicon N-Channel IGBT

Toshiba

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GT60M324 silicon n-channel igbt by Toshiba - Datasheet Preview

Datasheet Details

Part number	GT60M324
Manufacturer	Toshiba
File Size	176.26 KB
Description	Silicon N-Channel IGBT
Datasheet	GT60M324 Datasheet

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GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11μs (typ.) (IC = 60A) FRD : trr = 0.8μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat) =1.70V (typ.