GT60M324
GT60M324 is Silicon N-Channel IGBT manufactured by Toshiba.
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT
Unit: mm
- FRD included between emitter and collector
- Enhancement mode type
- High speed IGBT : tf = 0.11μs (typ.) (IC = 60A) FRD : trr = 0.8μs (typ.) (di/dt =
- 20 A/μs)
- Low saturation voltage: VCE (sat) =1.70V (typ.) (IC = 60A)
- High Junction temperature : Tj = 175℃...
