GT60J321 Overview
GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications Unit: mm · · · Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage:.
GT60J321 Datasheet Details
| Part number | GT60J321 |
|---|---|
| Datasheet | GT60J321_Toshiba.pdf |
| File Size | 183.83 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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