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GT60J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J321
The 4th Generation Soft Switching Applications
Unit: mm
· · ·
Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Screw torque DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg ¾ Rating 600 ±25 60 120 60 120 200 150 -55~150 0.8 Unit V V A
A
JEDEC
W °C °C N･m
― ― 2-21F2C
JEITA TOSHIBA
Weight: 9.75 g (typ.
GT60J321 Datasheet
