J464 Overview
Key Features
- 4-V gate drive Low drain-source ON resistance: RDS (ON) = 64 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = -100 μA (max) (VDS = -100 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm
