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J464 - 2SJ464

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Datasheet Details

Part number J464
Manufacturer Toshiba Semiconductor
File Size 211.30 KB
Description 2SJ464
Datasheet download datasheet J464 Datasheet
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2SJ464 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ464 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • • 4-V gate drive Low drain-source ON resistance: RDS (ON) = 64 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −100 −100 ±20 −18 −72 45 937 −18 4.
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