| Part number | JDH3D01FV |
|---|---|
| Datasheet | JDH3D01FV_ToshibaSemiconductor.pdf |
| File Size | 181.09 KB |
| Manufacturer | Toshiba |
| Description | Diode Silicon Epitaxial Schottky Barrier Type |
|
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CATHODE1/ANODE2 0.8±0.05 Unit: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
| Part Number | Description | Manufacturer |
|---|---|---|
| JDH3D01S | Diode Silicon Epitaxial Schottky Barrier Type | Toshiba Semiconductor |
| JDH2S01FS | UHF Band Mixer | Toshiba Semiconductor |
| JDH2S01T | UHF Band Mixer | Toshiba Semiconductor |
