Diode Silicon Epitaxial Schottky Barrier Type
| Part number | JDH3D01S |
|---|---|
| Manufacturer | Toshiba |
| File Size | 168.84 KB |
| Description | Diode Silicon Epitaxial Schottky Barrier Type |
| Datasheet | JDH3D01S_ToshibaSemiconductor.pdf |
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JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Small package Unit: mm Ratings (Ta = 25°C) Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 −55~125 Unit V mA °C °C 1. Using continuously under heavy loads (e.g.
| Part Number | Description |
|---|---|
| JDH3D01FV | Diode Silicon Epitaxial Schottky Barrier Type |
| JDH2S01FS | UHF Band Mixer |
| JDH2S01T | UHF Band Mixer |
| JDH2S02FS | UHF Band Mixer |
