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JDH3D01S
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01S
○ For wave detection
¾ Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 −55~125 Unit V mA °C °C
1. 1 ANODE1 1 SSM ｱﾉｰﾄﾞ 2. CATHODE2
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
JDH3D01S Datasheet
