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K13A65U - Silicon N-Channel MOSFET

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Datasheet Details

Part number K13A65U
Manufacturer Toshiba
File Size 186.55 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet K13A65U Datasheet

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TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 650 ±30 13 26 40 86 13 4.