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2SK2961
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2
2SK2961
Relay Drive, Motor Drive and DC−DC Converter Application
Unit: mm
z Low drain−source ON resistance z High forward transfer admittance
: RDS (ON) = 0.2 Ω (typ.) : |Yfs| = 2.0 S (typ.)
z Low leakage current : IDSS = 100 μA (VDS = 60 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 60 60 ±20 2.0 6.0 0.
K2961 Datasheet
