K2968 Datasheet | Toshiba

2SK2968 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSIII) 2SK2968 DC- DC Converter, Relay Drive and Motor Drive Applications l Low drain- source ON resistance l High forward transfer admittance : RDS (ON) = 1.05 Ω (typ.) : |Yfs| = 7.6 S (typ.) Unit: mm l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement- mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 10 30 150 810 10 15 150 - 55~150 Unit V V V A A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT...