K3667 Datasheet (Toshiba)

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Toshiba

K3667 Overview

Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

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Part Number	Manufacturer	Description
K3665	Panasonic	2SK3665