The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK3669
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)
2SK3669
Switching Regulator, Audio Amplifier and Motor Drive Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) www.DataSheet•4U.cEonmhancement mode : Vth = 3.0 to 5.
K3669 Datasheet
