Datasheet Summary
2SK3758
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3758
Switching Regulator Applications unit
- Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)
- High forward transfer admittance: |Yfs| = 3.5S (typ.)
- Low leakage current: IDSS = 100 A (VDS = 500 V)
- Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) /Circuit
Maximum Ratings (Ta = 25°C)
1155..66mamx.ax
3.84 0.2
3.84 0.2
101.05.5mmaax x
44..77mmaxax 1.3
6.6.66 mmaxa.x
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
DC (Note 1) Pulse (t = 1 ms)
(Note 1) Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche...