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2SK3842
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3842
Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 93 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
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K3842 Datasheet
