K6A60D - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	K6A60D
Manufacturer	Toshiba Semiconductor
File Size	273.33 KB
Description	Silicon N-Channel MOSFET
Datasheet	K6A60D Datasheet
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TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 ±30 6 24 40 173 6 4.

Published: Mar 27, 2014 |