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K6A65D - TK6A65D

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Part number K6A65D
Manufacturer Toshiba Semiconductor
File Size 189.27 KB
Description TK6A65D
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TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK6A65D Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 650 ±30 6 24 45 281 6 4.
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