MG400Q1US65H Datasheet | Toshiba

.. TOSHIBA IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications Unit: mm - - - High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC G (B) ― ― 2-109F1A JEITA TOSHIBA Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting ⎯ ⎯ Weight: 465 g (typ.) Rating 1200 ±20 400 800 400 800 2650 150 - 40 to 125 2500 (AC 1 minute) 3 3 Unit V V A Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque A W °C °C V N- m 2003-12-19 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) Eon Eoff IF = 400 A, VGE = 0 IF = 400 A, VGE = - 10 V Transistor stage Diode stage Inductive load VCC = 600 V, IC = 400 A VGE = ±15 V, RG = 2.4 Ω Tc = 125°C Inductive load VCC = 600 V, IC = 400 A VGE = ±15 V, RG = 2.4 Ω Test Condition VGE = ±20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 400 m A, VCE = 5 V IC = 400 A, VGE = 15 V Tc = 25°C Tc = 125°C Min ⎯ ⎯ 4.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 3.0 3.6 34000 0.05 0.05 0.10 0.55 0.05 0.60 2.4 0.25 ⎯ ⎯ 40 40 Max ±500 4.0 7.0 4.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.15 ⎯ 3.5 ⎯ 0.047 0.1 ⎯ m J ⎯ V µs °C/W µs Unit n A m A V V p F VCE = 10 V, VGE = 0, f = 1 MHz Note: Switching time measurement circuit and input/output waveforms - VGE IC RG VGE 0 90% 10% trr VCC IC VCE 0 10% td (off) toff tf 10% td (on) ton...