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MIG50Q201H

Manufacturer: Toshiba

MIG50Q201H datasheet by Toshiba.

MIG50Q201H datasheet preview

MIG50Q201H Datasheet Details

Part number MIG50Q201H
Datasheet MIG50Q201H-ToshibaSemiconductor.pdf
File Size 235.77 KB
Manufacturer Toshiba
Description N-Channel IGBT
MIG50Q201H page 2 MIG50Q201H page 3

MIG50Q201H Overview

MIG50Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q201H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over−current, realtime-current-control (RTC), under−voltage & over-temperature) in one package. l The electrodes are isolated from case. VCE (sat) = 3.5 V (Max.) toff = 2.6 µs...

MIG50Q201H Key Features

  • Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over−curr
  • The electrodes are isolated from case
  • High speed type IGBT : VCE (sat) = 3.5 V (Max.) toff = 2.6 µs (Max.) trr = 0.21 µs (Max.) : 2−110A1A : 520 g
  • Outline

MIG50Q201H Distributor

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