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MIG75Q201H

Manufacturer: Toshiba

MIG75Q201H datasheet by Toshiba.

MIG75Q201H datasheet preview

MIG75Q201H Datasheet Details

Part number MIG75Q201H
Datasheet MIG75Q201H-ToshibaSemiconductor.pdf
File Size 219.97 KB
Manufacturer Toshiba
Description N-Channel IGBT
MIG75Q201H page 2 MIG75Q201H page 3

MIG75Q201H Overview

MIG75Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75Q201H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. l The electrodes are isolated from case. VCE (sat) = 3.5 V (Max) toff = 2.5 µs (Max) trr = 0.21 µs (Max) l...

MIG75Q201H Key Features

  • Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-curr
  • The electrodes are isolated from case
  • High speed type IGBT : VCE (sat) = 3.5 V (Max) toff = 2.5 µs (Max) trr = 0.21 µs (Max)
  • Package dimensions : TOSHIBA 2-136A1A
  • Weight : Equivalent Circuit 1 2001-05-29 MIG75Q201H Maximum Ratings (Tj = 25°C ) Stage Characteristic Supp

MIG75Q201H Distributor

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