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MIG75Q202H

Manufacturer: Toshiba

MIG75Q202H datasheet by Toshiba.

MIG75Q202H datasheet preview

MIG75Q202H Datasheet Details

Part number MIG75Q202H
Datasheet MIG75Q202H-ToshibaSemiconductor.pdf
File Size 225.61 KB
Manufacturer Toshiba
Description N-Channel IGBT
MIG75Q202H page 2 MIG75Q202H page 3

MIG75Q202H Overview

MIG75Q202H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75Q202H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, realtime-current-control (RTC), under-voltage & over-temperature) in one package. l The electrodes are isolated from case. VCE (sat) = 3.5 V (Max) toff = 2.8 µs...

MIG75Q202H Key Features

  • Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-curr
  • The electrodes are isolated from case
  • High speed type IGBT : VCE (sat) = 3.5 V (Max) toff = 2.8 µs (Max) trr = 0.21 µs (Max)
  • Package dimensions : TOSHIBA 2-110A1A

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